Time-Resolved In-Situ Temperature Measurements Using Band-Edge Absorption Spectroscopy During MBE Growth

It is a well-known problem in molecular beam epitaxy (MBE) that the real sample temperature is in most cases unknown during the growth process. We have used a commercial band-edge absorption spectroscopy system to determine the sample temperature during bake-out and growth of different types of samples. Time-resolved in-situ measurements show how the sample temperature is influenced by different external effects and also demonstrate some limitations of precise temperature determination. This helps to understand the temperature behavior of GaAs-based samples during a growth run.